I-LPT-7 Diode-Pumped Solid-State Laser Demonstrator
Incazelo
I-LPT-7 yenzelwe ukufundisa okungajwayelekile komugqa kokuhlolwa kwamaKolishi namayunivesithi. Kungasiza abafundi baqonde i-diode pumped solid-state (DPSS) theory kanye ne-laser frequency technology technology. I-laser yesimo esiqinile: i-YVO4 crystal njenge-gain material, eyakhiwa nge-semiconductor laser pumping wavelength ye-808 nm kanye ne-emission ku-1.064 M. light infrared ngokusebenzisa i-KTP crystal njengoba imvamisa ye-laser intracavity isiphinda kabili isizukulwane esiluhlaza, kungenzeka ukugcina lo mkhuba nemvamisa yokukala, ukusebenza kahle kokuphindeka kabili, i-engeli yesigaba neminye imingcele eyisisekelo.
Imininingwane
| I-Semiconductor Laser | |
| Amandla wokukhipha we-CW | ≤ 500 mW |
| Ukwehlukaniswa | TE |
| Isikhungo Wavelength | 808 ± 10 nm |
| I-Operation Temperature Range | 10 ~ 40 ° C |
| Ukushayela Kwamanje | 0 ~ 500 mA |
| Nd: YVO4 I-Crystal | |
| Ukuhlushwa kwe-Nd Doping | 0.1 ~ 3 i-atm |
| Ubukhulu | 3 × 3 × 1 mm |
| Flatness | <λ / 10 @ 632.8 nm |
| Ukumboza | I-AR @ 1064 nm, R <0.1%; 808 = "" t = ""> 90% |
| I-KTP Crystal | |
| Ibanga le-Wavelength Transmissive | 0.35 ~ 4.5 µm |
| I-Coefficient ye-Electro-Optic | r33= 36 pm / V |
| Ubukhulu | 2 × 2 × 5 mm |
| Lokukhipha Mirror | |
| Ububanzi | Φ 6 mm |
| Radius of Curvature | 50 mm |
| I-He-Ne yokuqondanisa i-Laser | M 1 mW @ 632.8 nm |
| Ikhadi Lokubuka i-IR | Ibanga lokuphendula kwe-Spectral: 0.7 ~ 1.6 µm |
| Laser Ukuphepha Goggles | I-OD = 4+ ye-808 nm ne-1064 nm |
| Imitha yamandla wokubonisa | 2 μW ~ 200 mW, 6 izikali |
IZINGXENYE UHLU
|
Cha. |
Incazelo |
Ipharamitha |
Inani |
|
1 |
Isitimela Esibukekayo | ngesisekelo sekhava nothuli, He-Ne laser ugesi kufakwa ngaphakathi kwesisekelo |
1 |
|
2 |
He-Ne Laser Umnikazi | nomphathi |
1 |
|
3 |
Imbobo yokuqondanisa | f1 mm umgodi nomthwali |
1 |
|
4 |
Hlunga | f10 mm ukuvula nomphathi |
1 |
|
5 |
Lokukhipha Mirror | I-BK7, f6 mm R = 50 mm enesibambi esishintshayo nesiphethe i-4-axis |
1 |
|
6 |
I-KTP Crystal | I-2 × 2 × 5 mm enesibambi esishintshayo se-2-axis |
1 |
|
7 |
Nd: YVO4 I-Crystal | I-3 × 3 × 1 mm enesiphatho se-2-axis esishintshayo nesithwali |
1 |
|
8 |
808nm LD (laser diode) | ≤ 500 mW nge 4-axis isibambi esishintshayo nesithwali |
1 |
|
9 |
Detector Head Holder | nomphathi |
1 |
|
10 |
Isikhala seso lokubuka | 750 ~ 1600 nm |
1 |
|
11 |
I-He-Ne Laser Tube | 1.5mW@632.8 nm |
1 |
|
12 |
Imitha yamandla wokubonisa | 2 μW~200 mW (amabanga ayi-6) |
1 |
|
13 |
Inhloko ye-Detector | ngekhava neposi |
1 |
|
14 |
LD Isilawuli Samanje | 0 ~ 500 mA |
1 |
|
15 |
Intambo yamandla |
3 |
|
|
16 |
Incwadi Yokufundisa | V1.0 |
1 |
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